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Schottky Barrier Diodes (SBD)
MA2Q737
Silicon epitaxial planar type
Unit : mm
For high-frequency rectification
4.4 0.3 0 to 0.05
* Forward current (average) IF(AV): 1.5 A type * Reverse voltage (DC value) VR: 30 V * Allowing automatic insertion with the emboss taping
2.5 0.3
I Features
2
1
0.25 - 0.05
I Absolute Maximum Ratings Ta = 25C
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current*1 Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 30 30 1.5 60 -40 to +125 -40 to +125 Unit V V A A C C
1.2 0.4 5.0 - 0.1
+ 0.4
1.2 0.4
Non-repetitive peak forward surge current*2 Junction temperature Storage temperature
1 : Anode 2 : Cathode New Mini-Power Type Package (2-pin)
Marking Symbol: PC
Note) *1 : With a printed-circuit board (copper foil area 2.5 mm x 2.5 mm + 0.8 mm x 20 mm or more on both cathode and anode sides) *2 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
I Electrical Characteristics Ta = 25C
Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 30 V IF = 2 A VR = 10 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 70 50 Conditions Min Typ Max 1 0.5 Unit mA V pF ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 20 MHz 3. * : trr measuring instrument
Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Output Pulse
A
VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50
90% tp = 2 s tr = 0.35 ns = 0.05
2.15 0.3
+ 0.1
1.4 0.2
1
MA2Q737
IF(AV) Ta (1) Printed-circuit board: Glass epoxy board (2) Printed-circuit board: Alumina board Copper foil for both A and K sides 2.5 mm x 2.5 mm + 0.8 mm x 20 mm
104
Schottky Barrier Diodes (SBD)
IF V F
105 75C 25C
IR VR
A
K 2.5
103 104
Average forward current IF(AV) (A)
0.8 2.0
Forward current IF (mA)
1.5
(1)
102
Reverse current IR (A)
(2)
20 2.5
TC = 125C
- 20C
Ta = 125C
103 75C 102
1.0
10
0.5
1
10
25C
0
10-1
0
50
100
150
0
0.1
0.2
0.3
0.4
0.5
0.6
1
0
10
20
30
40
50
60
Ambient temperature Ta (C)
Forward voltage VF (V)
Reverse voltage VR (V)
VF Ta
0.8 0.7
IR T a
104 VR = 30 V
Ct VR
600
10 V 5V
0.6 0.5 0.4 0.3 0.2 0.1 10 mA 0 -40 0 40 80 120 160 200 IF = 2 A
Terminal capacitance Ct (pF)
103
500
Forward voltage VF (V)
Reverse current IR (A)
400
102
300
10
200
100 mA
1
100
10-1 -40
0
0 40 80 120 160 200
0
10
20
30
40
50
60
Ambient temperature Ta (C)
Ambient temperature Ta (C)
Reverse voltage VR (V)
2

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